Silicon-on-Sapphire Pressure Sensor technology

Silicon-on-Sapphire sensor technology has redefined the performance capability of ESI products.

The outstanding elastic properties of the sapphire substrate provide the perfect platform on which to create a pressure sensor with no measurable hysteresis and superb repeatability.

The measurement sensitive element consists of a silicon piezoresistive strain gauge microcircuit. The single crystal silicon forms a strong molecular bond to a sapphire substrate which is joined to a robust titanium alloy pressure diaphragm through a high temperature diffusion process. The excellent insulation properties of the sapphire allow the sensor to operate over a very wide temperature range without loss of performance.

Combined with all titanium wetted parts, this sensor offers unbeatable performance with high over pressures and excellent chemical compatibility.

SOS Technology features extensively throughout the ESI portfolio. See our product range here...

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